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APTGF15H120T3
Full - Bridge NPT IGBT Power Module
13 14
VCES = 1200V IC = 15A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a phase leg of twice the current capability
Q1 18 19
CR1
CR3
Q3 11 10
22 23 Q2
7 8 CR4 Q4
26 27
CR2
4 3
29 15
30
31 R1
32 16
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
A V W
30A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTGF15H120T3 - Rev 0
September, 2004
Parameter Collector - Emitter Breakdown Voltage
Max ratings 1200 25 15 60 20 140
Unit V
APTGF15H120T3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES ICES VCE(on) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Collector - Emitter Breakdown Voltage Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy VGE = 0V, IC = 500A Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 15A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =15A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 15A R G = 33 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 15A R G = 33
1200
Typ 1 1 3.2 4.0
Max 500 3.7 6 400
Unit V A mA V V nA Unit pF
2.5 4
Dynamic Characteristics
Min
Typ 1000 150 70 99 10 70 60 50 315 30 60 50 356 40 2 1
Max
nC
ns
ns
mJ
Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125
Min 1200
Typ
Max 250 500
Unit V A
September, 2004 2-6 APTGF15H120T3 - Rev 0
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=1200V
50% duty cycle
15 2.9 2.6 0.5 0.4 1.2 3.4
A V s C
IF = 15A VGE = 0V IF = 15A VR = 600V di/dt =400A/s
APT website - http://www.advancedpower.com
APTGF15H120T3
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K Min Typ 68 4080 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.9 2.0 150 125 100 4.7 110
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 -40 -40 -40
To heatsink
M4
Package outline
1
12
APT website - http://www.advancedpower.com
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APTGF15H120T3 - Rev 0
September, 2004
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28
APTGF15H120T3
Typical Performance Curve
70 Ic, Collector Current (A) 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 VCE , Collector to Emitter Voltage (V) Transfer Characteristics VGE , Gate to Emitter Voltage (V)
250s Pulse Test < 0.5% Duty cycle
Output characteristics (V GE=15V) Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle
16 14 12 10 8 6 4 2 0
8
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle TJ=25C
TJ=25C
TJ=125C
T J=125C
0
0.5
1
1.5
2
2.5
3
3.5
VCE, Collector to Emitter Voltage (V) Gate Charge
IC = 15A TJ = 25C V CE=240V V CE =600V
70
Ic, Collector Current (A)
18 16 14 12 10 8 6 4 2 0 0 20
60 50 40 30 20 10 0 0
V CE=960V
TJ =125C TJ =25C
2.5 5 7.5 10 12.5 VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 125C 250s Pulse Test < 0.5% Duty cycle
15
40
60
80
100
120
Gate Charge (nC) On state Voltage vs Junction Temperature
250s Pulse Test < 0.5% Duty cycle VGE = 15V
V CE, Collector to Emitter Voltage (V)
9 8 7 6 5 4 3 2 1 0 9
VCE, Collector to Emitter Voltage (V)
6 5 4 3 2 1 0
Ic=30A Ic=15A
Ic=30A
Ic=15A
Ic=7.5A
Ic=7.5A
10
11
12
13
14
15
16
-50
VGE , Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) Ic, DC Collector Current (A)
-25 0 25 50 75 100 TJ, Junction Temperature (C)
125
40 35 30 25 20 15 10 5 0
DC Collector Current vs Case Temperature
-50
-25
0 25 50 75 100 125 150 T C, Case Temperature (C)
APT website - http://www.advancedpower.com
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APTGF15H120T3 - Rev 0
September, 2004
APTGF15H120T3
Turn-On Delay Time vs Collector Current
VCE = 600V RG = 33
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
75 70 65 60 55 50 0 5 10 15 20 25 30 35 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 160
VCE = 600V RG = 33
400
VGE=15V, TJ=125C
350 300
V GE = 15V
250
VCE = 600V RG = 33
VGE =15V, T J=25C
200 0 5 10 15 20 25 30 35
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 50 45
TJ = 125C
tr, Rise Time (ns)
tf, Fall Time (ns)
120
40 35 30 25
TJ = 25C
80
V GE=15V
40
VCE = 600V, VGE = 15V, RG = 33
0 0 5 10 15 20 25 30 35 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current
VCE = 600V RG = 33
20 0 5 10 15 20 25 30 ICE, Collector to Emitter Current (A) 35
Eon, Turn-On Energy Loss (mJ)
Eoff, Turn-off Energy Loss (mJ)
8 7 6 5 4 3 2 1 0 0
Turn-Off Energy Loss vs Collector Current 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 ICE , Collector to Emitter Current (A) 35
TJ = 25C VCE = 600V VGE = 15V RG = 33 T J = 125C
T J=125C, VGE =15V
T J=25C, VGE=15V
5 10 15 20 25 30 ICE , Collector to Emitter Current (A)
35
Switching Energy Losses (mJ)
8 7 6 5 4 3 2 1 0
Switching Energy Losses vs Gate Resistance
VCE = 600V VGE = 15V TJ= 125C
Eon, 15A
Minimum Switching Safe Operating Area 35 IC, Collector Current (A) 30 25 20 15 10 5 0
Eoff, 15A
0
20
40
60
80
100
120
0
400
800
1200
Gate Resistance (Ohms)
VCE, Collector to Emitter Voltage (V)
APT website - http://www.advancedpower.com
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APTGF15H120T3 - Rev 0
September, 2004
APTGF15H120T3
Fmax, Operating Frequency (kHz) Capacitance vs Collector to Emitter Voltage 10000 Operating Frequency vs Collector Current 120 100 80 60 40 20 0 0 5 10 15 20 IC, Collector Current (A) 25
Hard switching ZCS ZVS V CE = 600V D = 50% RG = 33 TJ = 125C TC = 75C
C, Capacitance (pF)
1000
Cies
Coes 100 Cres 10 0 10 20 30 40 VCE , Collector to Emitter Voltage (V) 50
1 Thermal Impedance (C/W) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.5 0.3 0.1 0.05 0.7 0.9
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Single Pulse 0.0001 0.001 0.01 0.1 1
Rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTGF15H120T3 - Rev 0
September, 2004

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